An ultra-high-speed 4Gbit, dynamic random-access memory (DRAM) chip for mobile devices that Samsung Electronics has started building, will more than double the data transmission speed achieves by current standard mobile DRAM chips, according to the company.
The new double data rate 3 (LPDDR3) mobile DRAM is produced using 20-nanometer manufacturing process and is Samsung’s most compact circuitry to date. It can transmit data at up to 2.1Gbps per pin, more than double the 800Mbps data transmission rate of the previous memory standard mobile DRAM (LPDDR2).
LPDDR3 mobile DRAM enables seamless display of full HD video on smart phones with five inch or larger screens. Compared to a 30nm-class LPDDR3 DRAM, the new chip delivers 30 per cent performance improvement and 20 per cent saving in power consumption.
With the 20nm process also provides mobile devices with an extra 2GB of memory because it uses four of the new chips which have a height of .8mm.